• N Khadar Basha
• Dr. T Ramashri

The fourth fundamental electrical circuit element, memristor was implemented by HP Labs in 2008 that had been hypothesized by Leon Chua in 1971. The memristive technological innovation turns into a potentially great innovative technology these days that makes it possible for the consistent progressiveness of electrical power, area, and performance and as a consequence continuing to keep Moore’s law alive. It provides excellent scalability at very low-level technology, superior utilization whenever put to use as memory, alleviates overall electrical consumption. This paper impersonates comprehensive study of memristor behavior together with the modeling of memristor analysis is carried out with the assistance of Mathcad and Matlab Simulink simulator. We created Matlab Simulink algorithm for the model and afterward analysis the functionality; it is well-matched with the functionality of HP memristor and in addition, viability to be used in memory circuits. Within this paper, the primary goal ought to analyses the mathematical relationship among voltage, current, memristance along with the length of device furthermore demonstrated graphically. The memristor comprises memory with elastic resistance and additionally used as the high-speed switch. It is usually used in non-volatile memory in consideration of its high-speed switching operation.

Moore’s law, Scalability, Memristor, Memristance, Non -volatile.

"Mathematical Modelling of Threshold Voltage based Resistive Memory", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.3, Issue 10, page no.388-393, October 2016, Available :http://www.jetir.org/papers/JETIR1610067.pdf

"Mathematical Modelling of Threshold Voltage based Resistive Memory", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.3, Issue 10, page no. pp388-393, October 2016, Available at : http://www.jetir.org/papers/JETIR1610067.pdf