• Sanjeet Kumar Sinha
• Sweta Chander

In Nanoscale regime some disadvantages are associated with the existing MOSFETs, nanowire FET devices are one of the alternative semiconductor devices which have potential to replace the existing MOSFET technology in future. In this paper a simulation study is reported that how Ge nanowire FET devices can replace the MOSFETs. In devices metallic contacts are considered as source and drain as well as Ge nanowire is considered as a channel between source and drain. Different simulations are performed in nanoHUB with different channel length to analyze the impact of different factors on electronic transport inside the nanowire FETs. Analysis are observed with the scaling the channel length of the nanowire FETs. It is observed through simulation results that at low gate voltage, drain current and the sub-threshold swing increases.

MOSFET, NW-FET, Threshold-voltage, Ge-Nanowire FET.

"Pefformance and Electrical Charactrization of of Ge-Nanowire Field Effect Transistor ", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.5, Issue 11, page no.367-369, November 2018, Available :http://www.jetir.org/papers/JETIRDR06059.pdf

"Pefformance and Electrical Charactrization of of Ge-Nanowire Field Effect Transistor ", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.5, Issue 11, page no. pp367-369, November 2018, Available at : http://www.jetir.org/papers/JETIRDR06059.pdf