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Published in:

Volume 5 Issue 12
December-2018
eISSN: 2349-5162

Unique Identifier

JETIREB06081

Page Number

657-661

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Title

A Review on Transition Metal Dichalcogenides (TMDCs) based Field Effect Transistor

ISSN

2349-5162

Cite This Article

"A Review on Transition Metal Dichalcogenides (TMDCs) based Field Effect Transistor ", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.5, Issue 12, page no.657-661, December 2018, Available :http://www.jetir.org/papers/JETIREB06081.pdf

Abstract

A new class known as transition metal dichalcogenides (TMDCs) emerged from the graphene inventory because of its impressive characteristics. Motivated by the graphene success, the alternatively layered and unlayered two dimensional (2D) materials, have become the focal point of intensive research because of the unique electronic and mechanical properties. The source of these features was related to the electronic band structure's dimensional impact and the modulation. This review shows the recent advances of state-of-the art research into the characterization of single and few layers in electronic circuits, optical sensors. The analysis completes with the future prospect of heading the rapidly changing 2D materials group in the sciences of next decade.

Key Words

2D materials, charge carrier mobility, MoS2 FET, transition metal dichalcogenides.

Cite This Article

"A Review on Transition Metal Dichalcogenides (TMDCs) based Field Effect Transistor ", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.5, Issue 12, page no. pp657-661, December 2018, Available at : http://www.jetir.org/papers/JETIREB06081.pdf

Publication Details

Published Paper ID: JETIREB06081
Registration ID: 233708
Published In: Volume 5 | Issue 12 | Year December-2018
DOI (Digital Object Identifier):
Page No: 657-661
ISSN Number: 2349-5162

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Cite This Article

"A Review on Transition Metal Dichalcogenides (TMDCs) based Field Effect Transistor ", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.5, Issue 12, page no. pp657-661, December 2018, Available at : http://www.jetir.org/papers/JETIREB06081.pdf




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