• S.D.Lakade

In the present paper, we have reported the room temperature growth of (Sb0.2Bi0.8)2S3 thin films by dip method and annealed at various temperatures. The films were deposited from a reaction bath containing antimony chloride, glycine and sodium thiosulphate. We have analyzed the electrical, thermoelectrical and photoelectrochemical properties of thin films. The conductance of the samples is 1.021 x 10-6 (Ω cm)-1. The specific conductance will increases for pseudo-binary films with annealing temperature. Thermoelectric power was increases from 283.43 to 327.28µv/K as the temperature increases from 300 to 525 K. open circuit voltage and short-circuit current is obtained to be 284 mV and 2.42 mA/cm2 correspondingly for photoelectrode annealed at 473 K. The calculations indicate that the fill parameter is 38.51% and solar energy exchange output is 0.148% for sample annealed at 473 K. At 473 K have relative optical energy consequences in improvement in power output.

(Sb0.2Bi0.8)2S3, Thin film, electrical, thermo electrical, photoelectrochemical.

"Electrical, thermoelectrical and photoelectrochemical properties of (Sb0.2Bi0.8)2S3 Thin films by dip method", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.3, Issue 4, page no.476-487, April-2016, Available :http://www.jetir.org/papers/JETIR1701472.pdf

"Electrical, thermoelectrical and photoelectrochemical properties of (Sb0.2Bi0.8)2S3 Thin films by dip method", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.3, Issue 4, page no. pp476-487, April-2016, Available at : http://www.jetir.org/papers/JETIR1701472.pdf