• Madhujya Gogoi

At low temperatures, SbOx thin films are produced using atomic layer deposition (ALD) employing antimony reactants SbCl5 and Sb(NMe2)3 and oxidizers H2O and H2O2. SbCl5 reacts with both oxidizers, but no deposition is seen when Sb(NMe2)3 and H2O are used. For the first time, the reaction process and dielectric characteristics of ALD-SbOx thin films are examined in detail. These films display a strong breakdown field of 4 MV cm1, a high areal capacitance of 150–200 nF cm2, and a dielectric constant of 10–13. The ZnO semiconductor layer is effectively incorporated into a SbOx dielectric layer, resulting in the fabrication of thin film transistors (TFTs). A TFT with a SbOx dielectric layer formed at 200 °C from Sb(NMe2)3 and H2O2 exhibits outstanding performance, including a field effect mobility () of 12.4 cm2 V1 s1, an Ion/Ioff ratio of 4 108, a subthreshold swing of 0.22 V dec1, and a trapping state (Ntrap) of 1.1 1012 eV1 cm2. SbOx's amorphous structure and high areal capacitance enhance the interfaces between the semiconductor and dielectric layer of TFT devices, creating a strong electric field for electrons, hence increasing device mobility.

Atomic Layer Deposition, High-K Dielectric, Low Temperature, Oxide Semiconductor, ToF-ERDA

"THIN FILM TRANSISTORS: ATOMIC LAYER DEPOSITION OF HIGH-K SBOX AT LOW TEMP", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.3, Issue 2, page no.514-525, February-2016, Available :http://www.jetir.org/papers/JETIR1701769.pdf

"THIN FILM TRANSISTORS: ATOMIC LAYER DEPOSITION OF HIGH-K SBOX AT LOW TEMP", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.3, Issue 2, page no. pp514-525, February-2016, Available at : http://www.jetir.org/papers/JETIR1701769.pdf