UGC Approved Journal no 63975

ISSN: 2349-5162 | ESTD Year : 2014
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Published in:

Volume 3 Issue 2
February-2016
eISSN: 2349-5162

UGC and ISSN approved 7.95 impact factor UGC Approved Journal no 63975

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Published Paper ID:
JETIR1701769


Registration ID:
400665

Page Number

514-525

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Title

THIN FILM TRANSISTORS: ATOMIC LAYER DEPOSITION OF HIGH-K SBOX AT LOW TEMP

Authors

Abstract

At low temperatures, SbOx thin films are produced using atomic layer deposition (ALD) employing antimony reactants SbCl5 and Sb(NMe2)3 and oxidizers H2O and H2O2. SbCl5 reacts with both oxidizers, but no deposition is seen when Sb(NMe2)3 and H2O are used. For the first time, the reaction process and dielectric characteristics of ALD-SbOx thin films are examined in detail. These films display a strong breakdown field of 4 MV cm1, a high areal capacitance of 150–200 nF cm2, and a dielectric constant of 10–13. The ZnO semiconductor layer is effectively incorporated into a SbOx dielectric layer, resulting in the fabrication of thin film transistors (TFTs). A TFT with a SbOx dielectric layer formed at 200 °C from Sb(NMe2)3 and H2O2 exhibits outstanding performance, including a field effect mobility () of 12.4 cm2 V1 s1, an Ion/Ioff ratio of 4 108, a subthreshold swing of 0.22 V dec1, and a trapping state (Ntrap) of 1.1 1012 eV1 cm2. SbOx's amorphous structure and high areal capacitance enhance the interfaces between the semiconductor and dielectric layer of TFT devices, creating a strong electric field for electrons, hence increasing device mobility.

Key Words

Atomic Layer Deposition, High-K Dielectric, Low Temperature, Oxide Semiconductor, ToF-ERDA

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"THIN FILM TRANSISTORS: ATOMIC LAYER DEPOSITION OF HIGH-K SBOX AT LOW TEMP", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.3, Issue 2, page no.514-525, February-2016, Available :http://www.jetir.org/papers/JETIR1701769.pdf

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2349-5162 | Impact Factor 7.95 Calculate by Google Scholar

An International Scholarly Open Access Journal, Peer-Reviewed, Refereed Journal Impact Factor 7.95 Calculate by Google Scholar and Semantic Scholar | AI-Powered Research Tool, Multidisciplinary, Monthly, Multilanguage Journal Indexing in All Major Database & Metadata, Citation Generator

Cite This Article

"THIN FILM TRANSISTORS: ATOMIC LAYER DEPOSITION OF HIGH-K SBOX AT LOW TEMP", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.3, Issue 2, page no. pp514-525, February-2016, Available at : http://www.jetir.org/papers/JETIR1701769.pdf

Publication Details

Published Paper ID: JETIR1701769
Registration ID: 400665
Published In: Volume 3 | Issue 2 | Year February-2016
DOI (Digital Object Identifier):
Page No: 514-525
Country: -, -, India .
Area: Engineering
ISSN Number: 2349-5162
Publisher: IJ Publication


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