• Kavitha Kondaveeti
• K Amala Rajini

At present, Due to their superior performance, wide bandgap (WBG) devices give power converters the benefits of high frequency, highly efficient, and high-power density. However, they are also more prone to switching oscillations because to their low parasitic capacitance and quick switching speed. The performance of power converters and systems can be significantly impacted by the switching oscillations, which can result in voltage and current overshoots, shoot-through, electromagnetic interference, additional power loss, and even device damage. Although comprehensive and in-depth on this topic is lacking. For practical engineering, this article discusses the types, the causes and detrimental effects, the effects of parasitic factors, and the suppression techniques of these switching oscillations. At first switching oscillations are divided into distinct types, and their causes and the negative effects are analyzed. The impact of various parasitic factors on switching oscillations are discussed. It is discovered that because silicon carbide metal-oxide semiconductors have various physical structures. The effects vary depending on the type of transistor used, including field-effect transistors, enhancement-mode gallium nitride high electron mobility transistors (eGaN HEMTs), and cascade GaN HEMTs. Lastly, the primary techniques for suppressing switching oscillations are outlined, together with their benefits and drawbacks. Further study on this subject and the paper's conclusion are also included, which will expand readers' understanding of the switching oscillations of WBG devices and motivate readers to use WBG devices more effectively for high frequency and high-efficiency power conversion.

High frequency, parasitic parameters, switching oscillations, wide bandgap (WBG) devices

"A Survey of Wideband Semiconductor Device Switching Oscillations", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.10, Issue 3, page no.g237-g243, March-2023, Available :http://www.jetir.org/papers/JETIR2303635.pdf

"A Survey of Wideband Semiconductor Device Switching Oscillations", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.10, Issue 3, page no. ppg237-g243, March-2023, Available at : http://www.jetir.org/papers/JETIR2303635.pdf