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Published in:

Volume 10 Issue 11
November-2023
eISSN: 2349-5162

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Published Paper ID:
JETIR2311117


Registration ID:
527616

Page Number

b116-b122

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Title

IMPACT OF NANOCRYSTALLINE OXIDE IN CRYSTALLINE SEMICONDUCTOR THIN FILMS

Abstract

In this study, the structural, electrical, and optical characteristics of Na-doped NiO thin films were analysed. The bunch air-filled deposition of 0.1 M Na-doped NiO thin films at a substratum temperature of 420 °C was achieved. After analysing the XRD spectra of Na-doped NiO thin films, it was originate that these films have a monocrystalline structure with a cubic structure, with only a single (111) peak. At a concentration of 3 wt%, Na doped NiO thin films had a maximum crystallite size of 18.90 nm. When comparing undoped and Na-doped NiO thin films, the latter exhibits a higher optical transmission spectrum in the visible range. When Na was doped into the material at a concentration of 2 weight percent, the band gap energy was reduced to a minimum of 3.53 eV. With a 3 wt% mass fraction, the Urbach energy drops to as little as 0.312 eV. Electrical resistance in Na-doped NiO films is on the order of 5%. Na doping is most effective when applied in a 3 percent solution.

Key Words

Na doping, thin films, NiO, TCO, spray pneumatic technique, Urbach energy, semiconductors.

Cite This Article

"IMPACT OF NANOCRYSTALLINE OXIDE IN CRYSTALLINE SEMICONDUCTOR THIN FILMS", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.10, Issue 11, page no.b116-b122, November-2023, Available :http://www.jetir.org/papers/JETIR2311117.pdf

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2349-5162 | Impact Factor 7.95 Calculate by Google Scholar

An International Scholarly Open Access Journal, Peer-Reviewed, Refereed Journal Impact Factor 7.95 Calculate by Google Scholar and Semantic Scholar | AI-Powered Research Tool, Multidisciplinary, Monthly, Multilanguage Journal Indexing in All Major Database & Metadata, Citation Generator

Cite This Article

"IMPACT OF NANOCRYSTALLINE OXIDE IN CRYSTALLINE SEMICONDUCTOR THIN FILMS", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.10, Issue 11, page no. ppb116-b122, November-2023, Available at : http://www.jetir.org/papers/JETIR2311117.pdf

Publication Details

Published Paper ID: JETIR2311117
Registration ID: 527616
Published In: Volume 10 | Issue 11 | Year November-2023
DOI (Digital Object Identifier):
Page No: b116-b122
Country: Nagpur, Maharashtra, India .
Area: Physics
ISSN Number: 2349-5162
Publisher: IJ Publication


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