• Ruchita R. Patel
• Sandip R. Unadkat
• G. K. Solanki

This research investigates germanium monochalcogenide (GeSe) and lead-doped GeSe, whose optical properties are important for various applications. Direct Vapor Transport (DVT) grown platelet-like shaped single crystals of GeSePbx (x = 0, 0.1, 0.2, 0.3, 0.4). UV-VIS-NIR spectrophotometry reveals interesting spectra of absorption with regard to inter-band transitions involving phonons. Energy band gap values for GeSe exceed those for GeSePbx(x = 0, 0.1, 0.2, 0.3 ,0.4) thus stressing the importance of compositional purity. On account of its layer structure, GeSe has highly anisotropic absorption spectra which are suitable for manipulation of light-matter interaction. In order to develop electronics and optoelectronics devices, a thorough analysis of optical parameters in GeSePbx (x = 0, 0.1, 0.2, 0.3, 0.4) single crystals will be necessary.

Crystal Growth, Metal Chalcogenide, Optical Band Gap

"Insight into the Growth and Optical Characterization of Layered GeSePbx (x = 0, 0.1, 0.2, 0.3, 0.4) Single Crystals Using Direct Vapour Transport technique", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.4, Issue 1, page no.190-199, January-2017, Available :http://www.jetir.org/papers/JETIR1701B35.pdf

"Insight into the Growth and Optical Characterization of Layered GeSePbx (x = 0, 0.1, 0.2, 0.3, 0.4) Single Crystals Using Direct Vapour Transport technique", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.4, Issue 1, page no. pp190-199, January-2017, Available at : http://www.jetir.org/papers/JETIR1701B35.pdf