• Harshal Parmar

FPGA circuits have developed rapidly, because of their flexibility, their ease of use and the low cost to design a function with them. SRAM is volatile, both the configuration and information stored is lost. By working at high writing and reading speed, MRAM (Magnetic RAM) technology is one of the best solutions to bring complete non-volatility to the FPGA technology while keeping the power dissipation low. An MRAM can be re-programmed 1012 times and has a large retention time up to 10 years. The objective of our project is to contribute one such storage device by making Non-Volatile SRAM based on Magnetic Tunnel Junction (MTJ).

Magnetic Tunnel Junction (MTJ), Tunnel Magneto resistance (TMR), Non-volatile logic.

"Design & Simulation of Non-Volatile SRAM Using Magnetic Tunnel Junction", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.2, Issue 3, page no.742-746, March-2015, Available :http://www.jetir.org/papers/JETIR1503067.pdf

"Design & Simulation of Non-Volatile SRAM Using Magnetic Tunnel Junction", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.2, Issue 3, page no. pp742-746, March-2015, Available at : http://www.jetir.org/papers/JETIR1503067.pdf