UGC Approved Journal no 63975

ISSN: 2349-5162 | ESTD Year : 2014
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Published in:

Volume 3 Issue 10
October-2016
eISSN: 2349-5162

UGC and ISSN approved 7.95 impact factor UGC Approved Journal no 63975

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Published Paper ID:
JETIR1610067


Registration ID:
182187

Page Number

388-393

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Title

Mathematical Modelling of Threshold Voltage based Resistive Memory

Abstract

The fourth fundamental electrical circuit element, memristor was implemented by HP Labs in 2008 that had been hypothesized by Leon Chua in 1971. The memristive technological innovation turns into a potentially great innovative technology these days that makes it possible for the consistent progressiveness of electrical power, area, and performance and as a consequence continuing to keep Moore’s law alive. It provides excellent scalability at very low-level technology, superior utilization whenever put to use as memory, alleviates overall electrical consumption. This paper impersonates comprehensive study of memristor behavior together with the modeling of memristor analysis is carried out with the assistance of Mathcad and Matlab Simulink simulator. We created Matlab Simulink algorithm for the model and afterward analysis the functionality; it is well-matched with the functionality of HP memristor and in addition, viability to be used in memory circuits. Within this paper, the primary goal ought to analyses the mathematical relationship among voltage, current, memristance along with the length of device furthermore demonstrated graphically. The memristor comprises memory with elastic resistance and additionally used as the high-speed switch. It is usually used in non-volatile memory in consideration of its high-speed switching operation.

Key Words

Moore’s law, Scalability, Memristor, Memristance, Non -volatile.

Cite This Article

"Mathematical Modelling of Threshold Voltage based Resistive Memory", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.3, Issue 10, page no.388-393, October 2016, Available :http://www.jetir.org/papers/JETIR1610067.pdf

ISSN


2349-5162 | Impact Factor 7.95 Calculate by Google Scholar

An International Scholarly Open Access Journal, Peer-Reviewed, Refereed Journal Impact Factor 7.95 Calculate by Google Scholar and Semantic Scholar | AI-Powered Research Tool, Multidisciplinary, Monthly, Multilanguage Journal Indexing in All Major Database & Metadata, Citation Generator

Cite This Article

"Mathematical Modelling of Threshold Voltage based Resistive Memory", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.3, Issue 10, page no. pp388-393, October 2016, Available at : http://www.jetir.org/papers/JETIR1610067.pdf

Publication Details

Published Paper ID: JETIR1610067
Registration ID: 182187
Published In: Volume 3 | Issue 10 | Year October-2016
DOI (Digital Object Identifier):
Page No: 388-393
Country: -, -, -- .
Area: Engineering
ISSN Number: 2349-5162


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