UGC Approved Journal no 63975

ISSN: 2349-5162 | ESTD Year : 2014
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Published in:

Volume 4 Issue 2
February-2017
eISSN: 2349-5162

UGC and ISSN approved 7.95 impact factor UGC Approved Journal no 63975

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Published Paper ID:
JETIR1702004


Registration ID:
170056

Page Number

18-21

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Title

Review of SRAM and its Peripherals

Abstract

Semiconductor recollections are characterized taking into account usefulness, access patterns and storage capacity components. They are partitioned into Read Only Memories, Read-Write Memories and Non Volatile Read-Write Memories [1] [2]. The ROM fits in with the class of non-volatile recollections. It encodes data in the circuit topology that is by including or uprooting transistors. Since this topology is hardwired, the information cannot be altered; it must be perused. Detachment of the force supply from the gadget does not bring about the loss of information. The RAM acronym is utilized to depict Random Access Read-Write recollections. Information can be gotten to from an arbitrary area in any request. In a RAM, the information is put away either in flip-flops or in capacitors. Contingent upon which technique is utilized, they are delegated either Static RAM (SRAM) or Dynamic RAM (DRAM) separately. The DRAM cell comprises of a capacitor to store information and a transistor to get to the capacitor. [2] Cell data, i.e. voltage is corrupted basically because of an intersection spillage current at the storage node. In this way the cell information must be perused and revised periodically. On the other hand SRAM cell consists of a latch, therefore cell data are kept as long as power is turned on and refresh operation is not required. This paper reviews SRAM and all of its peripherals prominent in use.

Key Words

Access patterns, components, DRAM, SRAM, Topology, Volatile Memory.

Cite This Article

"Review of SRAM and its Peripherals", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.4, Issue 2, page no.18-21, February-2017, Available :http://www.jetir.org/papers/JETIR1702004.pdf

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2349-5162 | Impact Factor 7.95 Calculate by Google Scholar

An International Scholarly Open Access Journal, Peer-Reviewed, Refereed Journal Impact Factor 7.95 Calculate by Google Scholar and Semantic Scholar | AI-Powered Research Tool, Multidisciplinary, Monthly, Multilanguage Journal Indexing in All Major Database & Metadata, Citation Generator

Cite This Article

"Review of SRAM and its Peripherals", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.4, Issue 2, page no. pp18-21, February-2017, Available at : http://www.jetir.org/papers/JETIR1702004.pdf

Publication Details

Published Paper ID: JETIR1702004
Registration ID: 170056
Published In: Volume 4 | Issue 2 | Year February-2017
DOI (Digital Object Identifier):
Page No: 18-21
Country: Sagar, Madhya Pradesh, India .
Area: Engineering
ISSN Number: 2349-5162
Publisher: IJ Publication


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