• E. Ashlyn Kirupa

Copper Iron oxide (CuFeO2) of well ordered crystalline films were deposited on to glass substrates for various Cu:Fe concentrations 0.1:0.1, 0.15:0.15 and 0.2:0.2 M at the constant substrate temperature of 300 oC. Films which were characterized had a thickness of the order of few micrometers. Films deposited using optimized Cu:Fe precursor concentration (0.1:0.1M) and at the substrate temperature (300 oC) revealed well crystalline nature indexed for its rhombohedral phase. The diffraction peaks located at 2θ = 33.5 and 38.6o corresponds to (1 0 1) and (1 0 4) reflection of CuFeO2 phase. The activation energy decreases as the concentration of the films increases. From the observed results it was evidenced that the concentration has strong influence on the structural and electrical properties of the spray pyrolysed copper iron oxide films.

Thin films, Chemical vapour deposition, XRD, semiconductor

"Influence of Concentration on Structural Properties of Copper Iron Oxide Thin Films Synthesized Through Chemical Spray Pyrolysis Technique", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.4, Issue 12, page no.170-179, December-2017, Available :http://www.jetir.org/papers/JETIR1712206.pdf

"Influence of Concentration on Structural Properties of Copper Iron Oxide Thin Films Synthesized Through Chemical Spray Pyrolysis Technique", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.4, Issue 12, page no. pp170-179, December-2017, Available at : http://www.jetir.org/papers/JETIR1712206.pdf