• Hirak Kumar Chandra
• Shahnewaz Mondal
• Basir Ahamed Khan

Dilute magnetic semiconductors play crucial roles in next generation magnetic memory devices. GaAs is a well-known wide band gap semiconductor, while doped with Mn, a d-block element, in dilute limit, it becomes a dilute magnetic semiconductor. In this context, we have calculated the inter-atomic exchange parameters for Mn δ-doped GaAs heterostructures as a function of layer thickness. The inter-atomic exchange parameters J_1 and J_3 have been come out to be larger in dilute doping cases compared to the larger Mn coverage cases. For 50% δ- doping case the exchange parameter J_1has been found to be 60±10 meV. This increases to 90±10 meV at 12.5% doping. The induced magnetic moment on As has been found to die down as one goes beyond four monolayers from the Mn δ-doping layer.

Dilute magnetic semiconductor, Mn doped GaAs, Heterostructure, Magnetic properties

"Magnetic properties of Mn δ-doped GaAs", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.5, Issue 1, page no.1686-1694, January-2018, Available :http://www.jetir.org/papers/JETIR1801292.pdf

"Magnetic properties of Mn δ-doped GaAs", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.5, Issue 1, page no. pp1686-1694, January-2018, Available at : http://www.jetir.org/papers/JETIR1801292.pdf