• Dipankar Chakdar

The back contact in the CdTe/CdS thin-film solar cell is a very important part of device fabrication. In our present work the back contact is made with a thin intermediate layer of CuxO in between CdTe and contact material, which reduces the diffusion of Cu through the grain boundary of the CdTe to increase the stability of the cells. I-V characteristics of the CdTe/CdS cell exhibits that the efficiency increases 11.22% due to the introduction of CuxO as a skin layer. The generation of polarizing field due to CuxO nano structure, when it acts as an intermediate layer, reduces the barrier height of the CdTe-metal contact and improves the ohmic contact in CdTe-metal structure.

back contact, CuxO, potential barrier, charge polarization, nano-structure, ohmic contact.

"A Low resistance contact formation in CdTe/CdS thin-film solar cells", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.5, Issue 1, page no.81-92, January-2018, Available :http://www.jetir.org/papers/JETIR1801330.pdf

"A Low resistance contact formation in CdTe/CdS thin-film solar cells", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.5, Issue 1, page no. pp81-92, January-2018, Available at : http://www.jetir.org/papers/JETIR1801330.pdf