• Anoop kumar

There has been an increasing interest during the last few decades in the synthesis of binary and ternary semiconducting chalcogenide thin films, because of the widespread applications in various fields of science and technology leading to a drastic cut in the cost of production of semiconductor devices.1-6 The growth of thin films is a thermodynamically non-equilibrium process, meaning that the same system may exhibit drastically different growth behavior under different deposition conditions (e.g., layer-by-layer growth at low deposition rates, the formation of three-dimensional islands at high deposition rates, etc.)7-8 In the thin film formation, the properties are strongly dependent on preparatory technique used.9 Among the various deposition techniques, the chemical bath deposition is a low temperature soft method for the growth of thin films. This article deals with the theoretical background of chemical bath deposition method. The reaction mechanism, growth kinetics, thickness measurement, physical properties and compositional analysis are elaborated.

Measurement, Deposition, Effect, Experiment, Preparatory

"Cd1-xNixSeTHIN FILMS: GROWTH MECHANISM, KINETIC STUDIES AND COMPOSITIONAL ANALYSIS", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.5, Issue 2, page no.1035-1044, February-2018, Available :http://www.jetir.org/papers/JETIR1802183.pdf

"Cd1-xNixSeTHIN FILMS: GROWTH MECHANISM, KINETIC STUDIES AND COMPOSITIONAL ANALYSIS", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.5, Issue 2, page no. pp1035-1044, February-2018, Available at : http://www.jetir.org/papers/JETIR1802183.pdf