• MUKUL KISHORE

CIGS-based thin film module technology has all opportunities to compete with crystalline silicon. The cells under study differ on open circuit voltage Voc. but not so much in their ‘optical’ properties (light current Jsc, quantum efficiency QE(λ). On the other hand, they do differ in their ‘electrical’ properties, both empirical (apparent shunt conductance Gsh, fill factor FF) and physical (diode ideality n, diode saturation current Jo and built-in potential). The results point to the conclusion that the cell behaviour is determined by the larger than unity n value and to a minor extend, by shunt-conductance but series-resistance hardly has any influence. Further using a non-uniform Ga/In ratio throughout the film thickness, additional fields can be built into p-type CIGS based solar cells, which can enhance performance. It has been shown that the positive gradient structure has the highest current density and the lowest open circuit voltage due to enhanced charge carries collection efficiency and optimized recombination profile. The reverse gradient structure has the maximum overall efficiency and open circuit voltage due to higher potential barrier at the heterointerface, but the lowest current density.

ELECTRICAL PROPERTIES OF CIGS-SOLAR CELL WITH GRADED BAND GAP

"ELECTRICAL PROPERTIES OF CIGS-SOLAR CELL WITH GRADED BAND GAP", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.5, Issue 2, page no.91-95, February-2018, Available :http://www.jetir.org/papers/JETIR1802318.pdf

"ELECTRICAL PROPERTIES OF CIGS-SOLAR CELL WITH GRADED BAND GAP", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.5, Issue 2, page no. pp91-95, February-2018, Available at : http://www.jetir.org/papers/JETIR1802318.pdf