UGC Approved Journal no 63975(19)

ISSN: 2349-5162 | ESTD Year : 2014
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Published in:

Volume 5 Issue 3
March-2018
eISSN: 2349-5162

UGC and ISSN approved 7.95 impact factor UGC Approved Journal no 63975

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Published Paper ID:
JETIR1803285


Registration ID:
229455

Page Number

80-85

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Title

XRD Study Of the FabricatedSilicon Nanowire Grown On Silicon Substrate

Abstract

In the study of silicon nanowire on the silicon substrate we have taken the study of XRD pattern of grown silicon nanowires.Here the silicon nanowire are grown on silicon substrate are done by the MACE method.MACE is well known method in the recent scenario to which we are going through now because of its simplicity and low cost values.This method cover the chemical use of hydrofluoric acid and hydrogen peroxide and silver nitrate as its basic requirements.

Key Words

XRD Study Of the FabricatedSilicon Nanowire Grown On Silicon Substrate

Cite This Article

"XRD Study Of the FabricatedSilicon Nanowire Grown On Silicon Substrate", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.5, Issue 3, page no.80-85, March-2018, Available :http://www.jetir.org/papers/JETIR1803285.pdf

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2349-5162 | Impact Factor 7.95 Calculate by Google Scholar

An International Scholarly Open Access Journal, Peer-Reviewed, Refereed Journal Impact Factor 7.95 Calculate by Google Scholar and Semantic Scholar | AI-Powered Research Tool, Multidisciplinary, Monthly, Multilanguage Journal Indexing in All Major Database & Metadata, Citation Generator

Cite This Article

"XRD Study Of the FabricatedSilicon Nanowire Grown On Silicon Substrate", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.5, Issue 3, page no. pp80-85, March-2018, Available at : http://www.jetir.org/papers/JETIR1803285.pdf

Publication Details

Published Paper ID: JETIR1803285
Registration ID: 229455
Published In: Volume 5 | Issue 3 | Year March-2018
DOI (Digital Object Identifier):
Page No: 80-85
Country: -, -, - .
Area: Engineering
ISSN Number: 2349-5162
Publisher: IJ Publication


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