UGC Approved Journal no 63975(19)

ISSN: 2349-5162 | ESTD Year : 2014
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Published in:

Volume 5 Issue 4
April-2018
eISSN: 2349-5162

UGC and ISSN approved 7.95 impact factor UGC Approved Journal no 63975

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Published Paper ID:
JETIR1804384


Registration ID:
301036

Page Number

972-976

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Title

Analysis Of Semiconducting Nano-crysrtalline Structure With Various Techniques

Abstract

The field of nanomaterials is a vastly growing field with a plan to ease the society in giving a revolutionary performance in industrialization. In our article we are exploring the nanostructural domain of the most influential material silicon, the reason for its valuable performances in optoelectronics and energy harvesting. Here we report, fabrication of silicon nanowires on N type silicon wafer having resistivity lies between 0.001-0.1 Ohm cm by metal electrode less wet chemical etching (MEWCE). Here we are presenting the cage-like structure of Silicon nanowire. Surface morphology were extensively investigated by using technique such as field electron scanning electron microscopy (FESEM).The MEWCE method has been widely explored for developing silicon based photovoltaic devices with its benefits for low-cost and large-area fabrication of silicon nanowire (SiNWS) of high aspect ratios (height to volume). According to FESEM images, the morphology and particle size are influenced by augmentation in etching. Here we have used the etching duration of 45 minutes. The diameter of the wire has been measured using imageJ software and the gaussian fitting gave the result diameter of 9 nm(approx.) which is of great use in the sensor application also it introduces the quantum confinement effect.

Key Words

SiNWs; MEWCE; FESEM

Cite This Article

"Analysis Of Semiconducting Nano-crysrtalline Structure With Various Techniques", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.5, Issue 4, page no.972-976, April-2018, Available :http://www.jetir.org/papers/JETIR1804384.pdf

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2349-5162 | Impact Factor 7.95 Calculate by Google Scholar

An International Scholarly Open Access Journal, Peer-Reviewed, Refereed Journal Impact Factor 7.95 Calculate by Google Scholar and Semantic Scholar | AI-Powered Research Tool, Multidisciplinary, Monthly, Multilanguage Journal Indexing in All Major Database & Metadata, Citation Generator

Cite This Article

"Analysis Of Semiconducting Nano-crysrtalline Structure With Various Techniques", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.5, Issue 4, page no. pp972-976, April-2018, Available at : http://www.jetir.org/papers/JETIR1804384.pdf

Publication Details

Published Paper ID: JETIR1804384
Registration ID: 301036
Published In: Volume 5 | Issue 4 | Year April-2018
DOI (Digital Object Identifier):
Page No: 972-976
Country: -, -, - .
Area: Engineering
ISSN Number: 2349-5162
Publisher: IJ Publication


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