• N.Velmurugan
• P.Muzammil
• G. Shakil Muhammed

Here we report the synthesis and characterization of Fe doped GaN nanostructure. The Fe-doped nanostructures were synthesized by Sol-gel method. The Crystalline quality and morphology of the synthesized GaN with different doping concentration was examined using X-ray diffraction, field emission scanning electron microscopy. X-ray diffraction indicates that the synthesized samples were wurtzite GaN nanostructure with high purity and no other second phase was formed during the growth. The SEM Image shows smaller individual nano particles of various sizes in the range of 30-50 nm. The band gaps of the synthesized sample were obtained using Diffuse Reflectance Spectroscopy, the band gap value increases with increasing Fe concentration. These results suggest that the Fe doped-GaN could be a promising candidate for optoelectronic and magneto electronic devices.

Fe doped GaN, Sol-gel synthesis, Nanostructure, XRD, SEM, Optical property.

"Structural and Optical properties of Fe doped Gallium Nitride by sol-gel Method", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.5, Issue 9, page no.562-567, September-2018, Available :http://www.jetir.org/papers/JETIR1809588.pdf

"Structural and Optical properties of Fe doped Gallium Nitride by sol-gel Method", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.5, Issue 9, page no. pp562-567, September-2018, Available at : http://www.jetir.org/papers/JETIR1809588.pdf