• M.Latha
• Dr. R. Ananda Natarajan

In this paper a MEMS pressure sensor for low pressure measurement in the range (0-5) kPa is proposed. Based on the burst pressure calculation the diaphragm dimensions are considered and four piezoresistors are placed on the diaphragm to sense deflection. To improve the sensitivity, further two modified ring embossed structures are proposed. Structure one has equally spaced and equal width rings. In the second structure the rings are equally spaced and one corner opened. The intellisuite MEMS CAD tool has been used to develop and analyze the performance of the two structures with standard flat diaphragm. The diaphragm side length is taken as 288 micro meter. The results show that deflection sensitivity improves 350% and voltage sensitivity improves 259%.Improvement of stress generation is 250%.Analytical results are compared with simulation results. These results conclude that the ring embossed diaphragm has better sensitivity and linearity than flat diaphragm.

Piezoresistive, Pressure sensor, Stress, Sensitivity, Low pressure, Intellisuite.

"SENSITIVITY ENRICHMENT BY EQUALLY SPACED RINGS EMBOSSED SILICON DIAPHRAGM IN LOW PRESSURE MEMS PIEZORESISTIVE PRESSURE SENSORS", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.5, Issue 11, page no.74-81, November-2018, Available :http://www.jetir.org/papers/JETIR1811611.pdf

"SENSITIVITY ENRICHMENT BY EQUALLY SPACED RINGS EMBOSSED SILICON DIAPHRAGM IN LOW PRESSURE MEMS PIEZORESISTIVE PRESSURE SENSORS", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.5, Issue 11, page no. pp74-81, November-2018, Available at : http://www.jetir.org/papers/JETIR1811611.pdf