• Khurshed A. Shah
• Bashir Mohi Ud Din Bhat
• S. Muzaffar Ali Andrabi3
• Khalid Mujasam Batoo

Here we report the effect of dot size on exciton energies confined in a Gallium Arsenide (GaAs) spherical quantum dot and found that exciton energy is purely dependent on the dot size. The results showed that by increasing the dot size both the ground state energy and first excited state energy decreases and at a given dot radius, the first excited state exciton energy is found to increase 5 orders of magnitude more than the ground state exciton energy. In addition we calculated and plotted the dependence of probability density on exciton dot size in GaAs quantum dot and the results reveal that the probability of the exciton in the ground state is zero whereas it is maximum in the first excited state. The present work significantly explains the exciton energies in GaAs quantum dot and its dependence on size, which will find number of applications in the modeling of futuristic nano size electronic devices.

Exciton energy, GaAs quantum dot, Probability density, Variational method, Effective mass approximation

"Effect of Dot Size on Exciton Energy States Confined in a Spherical Gallium Arsenide Quantum Dot", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.5, Issue 11, page no.588-590, November-2018, Available :http://www.jetir.org/papers/JETIR1811777.pdf

"Effect of Dot Size on Exciton Energy States Confined in a Spherical Gallium Arsenide Quantum Dot", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.5, Issue 11, page no. pp588-590, November-2018, Available at : http://www.jetir.org/papers/JETIR1811777.pdf