• Nana Pradhan
• Nikhil Mhatre
• Sarthak Hajirnis
• Tanmay Thakur
• Lokesh Tribedi

In this paper, p-type silicon samples were uniformly implanted with He^(+) ions for the doses of 1 × 10^(16) ions cm^(-2) and 1 × 10^(15) ions cm^(-2) at the energy ranges from 60 to 100 keV. The Microstructural and Morphological studies of non-implanted and implanted samples were carried out using Micro-Raman, XRD and SEM techniques. The blue shift of Si-Si vibrational modes were observed by Micro-Raman studies. XRD study of non-implanted sample showed the peak at 69.1º of <100> reflection. The crystallite size, Micro-strain and dislocation density were found in the ranges 1.40 to 1.535 nm, 26.167 to 31.478 and 4.24403 × 10^(17) nm^(-2) to 5.09553 × 10^(17) nm^(-2) respectively. However these estimated parameters vary with ion energy and doses in the silicon samples. SEM studies showed the smooth morphology of the non-implanted sample. After implantation with Helium ion for different energy and doses, tracks and inverted disc like swelling is observed in the implanted silicon samples.

Silicon, Ion implantation, He+, XRD, Raman Spectroscopy and SEM

"Energy Impact on Micro-structural and Morphological Study of He+ Implanted Silicon", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.6, Issue 1, page no.275-280, January-2019, Available :http://www.jetir.org/papers/JETIR1901636.pdf

"Energy Impact on Micro-structural and Morphological Study of He+ Implanted Silicon", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.6, Issue 1, page no. pp275-280, January-2019, Available at : http://www.jetir.org/papers/JETIR1901636.pdf