• Dilip Kumar Jalan

Compared to crystalline silicon and polycrystalline silicon, amorphous silicon (a-Si) is preferred because of its excellent characteristics such as high absorption coefficient, good response in low-light environment, and cheap photo sensor material. The inherent disorder of the material creates many charge defect states that hinder carrier transport. Charging defects in the optically active material, the intrinsic layer (I layer) of a-Si: H PIN photodiodes, reduce the built-in electric field, thereby increasing the local light absorption coefficient and reducing the free light average lifetime Career. Improves responsiveness and sensitivity while reducing response time. Short-distance optical communication, optical storage systems, active pixel sensors, and imaging sensors require the high responsiveness and sensitivity of low dark current optical sensors. The p-i-n a-Si: H photodiode is a promising device. Natural and light-induced local densities and energy distributions in the energy gap of a-Si: H have a significant effect on the photoconductivity of thin film photodiodes. It has been observed that deep defect states in the i layer contribute to capacitance at various bias voltages. In addition, capacitors reach an upper limit close to the built-in potential. Based on this method and the results obtained, a-Si: H p-i-n photodiodes were used as biosensor transducers to detect chemiluminescence in mammalian cells.

Amorphous Silicon, Photodiode, Biosensor Transducer, Intrinsic Layer, Photoconductivity

"Exploration of Different Models And Photoelectric Properties of A-Si-H P-I-N Photo Sensor", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.6, Issue 2, page no.381-385, February-2019, Available :http://www.jetir.org/papers/JETIR1902C60.pdf

"Exploration of Different Models And Photoelectric Properties of A-Si-H P-I-N Photo Sensor", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.6, Issue 2, page no. pp381-385, February-2019, Available at : http://www.jetir.org/papers/JETIR1902C60.pdf