UGC Approved Journal no 63975(19)

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Published in:

Volume 6 Issue 4
April-2019
eISSN: 2349-5162

UGC and ISSN approved 7.95 impact factor UGC Approved Journal no 63975

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Published Paper ID:
JETIR1904B99


Registration ID:
205823

Page Number

689-706

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Title

Mxene as Topological Insulator.

Abstract

Abstract : Mxenes are 2D inorganic compounds of transition metal carbides, nitrides, or carbonitrides with few atomic thickness. These compounds are exploited for industrial, biomedical, electronic and energy storage devices. Due to their large spin orbit coupling (SOC) and Dirac like band at Fermi level, it is predicted that M'-M''xene (M' and M" are transition metals) can be used as Topological Insulator. Topological insulator is a new state of matter with insulating in bulk and superconducting in surface or edge state. In this work, we will review the literature related to the topic and use WIEN2K for the study of some properties. We will discuss about the experimental methods that we are going to perform shortly. We use Scanning Electron Microscope-Electron Dispersive Spectrometer (SEM-EDS), X-Ray Diffraction Unit (XRD), Scanning Tunneling Microscope (STM), High Resolution Tunneling Electron Microscope (HRTEM), Fourier Transform Infrared Spectrophotometer (FTIR) and Angle Resolved Photoemission Spectroscope (ARPES) for analyzing surface and energy spectrum for abundancy, crystal structure, magnetic properties, imaging surfaces at the atomic level, structure & morphology, infrared spectrum and electronic structure of solids, solid surfaces & interfaces respectively. The topological surface state of the mxene systems can also be analyzed with the help of the loop variable called Z2 invariant and Chern Number. We reviewed different theoretical models, material properties and experimental results of Topological Insulators in 2D and 3D phases. Surface electrons in Topological Insulator are superconducting due to absence of their backscattering. So, Mxene can be used in spintronic devices, transistors without dissipation for quantum computers based on Quantum Spin Hall Effect (QSHE) and Quantum Anamolous Hall Effect (QAHE) and other applications on advanced magnetoelectronic and optoelectronic devices as topological insulator.

Key Words

Keywords: Mxene, spin orbit coupling, spintronic devices, Z2 topological invariant and chern number, WIEN 2K, ARPES.

Cite This Article

"Mxene as Topological Insulator.", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.6, Issue 4, page no.689-706, April-2019, Available :http://www.jetir.org/papers/JETIR1904B99.pdf

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2349-5162 | Impact Factor 7.95 Calculate by Google Scholar

An International Scholarly Open Access Journal, Peer-Reviewed, Refereed Journal Impact Factor 7.95 Calculate by Google Scholar and Semantic Scholar | AI-Powered Research Tool, Multidisciplinary, Monthly, Multilanguage Journal Indexing in All Major Database & Metadata, Citation Generator

Cite This Article

"Mxene as Topological Insulator.", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.6, Issue 4, page no. pp689-706, April-2019, Available at : http://www.jetir.org/papers/JETIR1904B99.pdf

Publication Details

Published Paper ID: JETIR1904B99
Registration ID: 205823
Published In: Volume 6 | Issue 4 | Year April-2019
DOI (Digital Object Identifier): http://doi.one/10.1729/Journal.23872
Page No: 689-706
Country: Visakhapatnam, Andhra University, India .
Area: Physics
ISSN Number: 2349-5162
Publisher: IJ Publication


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