• A. SIVASANKAR REDDY

Ultrathin Tantalum nitride (TaNx) films were prepared by dc magnetron sputtering on glass substrates at different nitrogen partial pressures. The crystal structure, compositional, microstructure, surface morphology, and optical properties were investigated. The deposition rate of the films was strongly influenced by the nitrogen partial pressure and it was continuously decreased from 3.1 to 1.8nm/min with increase of nitrogen partial pressure from 1x10-2Pa to 8x10-2Pa. The films show very fine grains and homogenous microstructure when the films deposited at nitrogen partial pressure of 4x10-2Pa. The optical transmittance of the films increased from 83 to 91% in the visible region by increasing of nitrogen partial pressure from 1x10-2 to 4x10-2Pa.

Tantalum nitride, ultrathin films, Sputtering, Nitrogen partial pressure

"Ultrathin TaNx films prepared by dc magnetron sputtering", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.6, Issue 4, page no.469-472, April-2019, Available :http://www.jetir.org/papers/JETIR1904F75.pdf

"Ultrathin TaNx films prepared by dc magnetron sputtering", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.6, Issue 4, page no. pp469-472, April-2019, Available at : http://www.jetir.org/papers/JETIR1904F75.pdf