• Rashmi Yadav

This paper reports the optical amplification characteristics of Type I GRIN-SQW (Graded Index Single Quantum Well) InGaAsP/InP based nano-scale heterostructure, taking into account the variation in quantum well (active region) width with in TE (Transverse Electric) polarization mode. Apart from the lasing characteristics, we have also predicted the variation of modal gain spectra in terms of wavelength within both TE and TM polarization modes. The obtained outcomes suggest that the TE modal gain spectra in terms of well width are more pronounced rather than in TM mode. The evaluated consequences in the present work reveals, maximum gain is obtained at wavelength 1.40 µm for the minimum wavelength used (2nm) in TE mode polarization, therefore these nano-structures are very useful due to less attenuation, as a light source for the optical fiber based communication system functioning in the NIR region.

III-V Semiconductors, Material Gain, Heterostructures.

"Quantum Well Width Effects on Type I GRIN SQW-InGaAsP/InP Nano-Heterostructure", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.6, Issue 4, page no.247-251, April-2019, Available :http://www.jetir.org/papers/JETIR1904I43.pdf

"Quantum Well Width Effects on Type I GRIN SQW-InGaAsP/InP Nano-Heterostructure", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.6, Issue 4, page no. pp247-251, April-2019, Available at : http://www.jetir.org/papers/JETIR1904I43.pdf