• PREMJEET G. JADHAV
• DEELIP S. BHAVSAR

The zinc doped cadmium selenide i.e. Cd1−xZnxSe is an important semiconducting alloy. the different physical properties can be studied by changing values of x. Thin films of zinc doped cdse (Cd1−xZnxSe ) of a thickness of 1000 Å, 1500 Å, 2000 Å, 2500 Å with different compositions (x = 0.5 and 0.75) were deposited by vacuum deposition technique under the pressure of ~10-5 mbar. onto a glass substrate. In this paper, we have studied thin films of a thickness of 2000 Å. The effect of Zinc content on structural, morphological and compositional properties in Cd1−xZnxSe thin films has been investigated in the present work. The films showed the dominant hexagonal phase of CdSe and the cubic phase of ZnSe. The lattice parameter a for the hexagonal structure was 4.425 Å, whereas for the cubic structure a is equal to 5.666. The particle size D is nearly equal to 4 Å in a hexagonal and a cubic structure. The XRD pattern shows that the two binary compounds have been completely transformed into a ternary compound with hexagonal (wurtzite) structure and cubic structure and polycrystalline nature. Scanning electron microscopy (SEM) demonstrates the surface morphology of Zinc doped CdSe thin film. The energy dispersive x-ray (EDAX) analysis confirmed the nearly stoichiometric deposition of the film.

Thin film, Zinc, Cadmium Selenide, EDAX, Crystal Structure, XRD, Surface Morphology, SEM.

"Characterization of Zinc Doped Cadmium Selenide [Cd1−xZnxSe ] Thin Films Prepared by Vacuum Deposition Technique", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.6, Issue 4, page no.276-280, April-2019, Available :http://www.jetir.org/papers/JETIR1904M42.pdf

"Characterization of Zinc Doped Cadmium Selenide [Cd1−xZnxSe ] Thin Films Prepared by Vacuum Deposition Technique", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.6, Issue 4, page no. pp276-280, April-2019, Available at : http://www.jetir.org/papers/JETIR1904M42.pdf