UGC Approved Journal no 63975(19)
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ISSN: 2349-5162 | ESTD Year : 2014
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Published in:

Volume 6 Issue 4
April-2019
eISSN: 2349-5162

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Published Paper ID:
JETIR1904S55


Registration ID:
303677

Page Number

1750-1754

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Title

Semiconductor- metal phase transitions under high pressure

Abstract

We study the effects of high pressure on the electronic properties of the chain type TIMX2 crystals. Calculations have been made fo the variation of the energies of the main extremums of the conduction and valance bands. Decrease of the bandgap under pressure and semiconductor- metal phase transition in TISe between 2.3 and 2.7 GPa under uniaxial pressure and ~5.14 Pa under hydrostatic pressure is found.

Key Words

Semiconductor transitions uniaxial pressure hydrostatic pressure

Cite This Article

"Semiconductor- metal phase transitions under high pressure", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.6, Issue 4, page no.1750-1754, April 2019, Available :http://www.jetir.org/papers/JETIR1904S55.pdf

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2349-5162 | Impact Factor 7.95 Calculate by Google Scholar

An International Scholarly Open Access Journal, Peer-Reviewed, Refereed Journal Impact Factor 7.95 Calculate by Google Scholar and Semantic Scholar | AI-Powered Research Tool, Multidisciplinary, Monthly, Multilanguage Journal Indexing in All Major Database & Metadata, Citation Generator

Cite This Article

"Semiconductor- metal phase transitions under high pressure", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.6, Issue 4, page no. pp1750-1754, April 2019, Available at : http://www.jetir.org/papers/JETIR1904S55.pdf

Publication Details

Published Paper ID: JETIR1904S55
Registration ID: 303677
Published In: Volume 6 | Issue 4 | Year April-2019
DOI (Digital Object Identifier):
Page No: 1750-1754
Country: Muzaffarpur, Bihar, India .
Area: Physics
ISSN Number: 2349-5162
Publisher: IJ Publication


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