• Manu Smirty

A description of nonlinearities in photoconductivity of photoexcited carries in amorphous silicon is obtained in terms of quasi Fermi levels of electrons and holes. Separation of quasi Fermi level is taken as index for the level of excitation and in its term a transition is obtained in the properties of the semiconductor. At lower level of excitation when the semiconductor is dangling bond dominated, a superlinearity in photoconductivity with respect to generation rate is obtained whereas at higher levels of excitation the charges in the semiconductor are tail states dominated with a consequent sublinear photoconductivity can be observed. This explains the physics underlying variations in lifetime and photoconductivity in amorphous semiconductors. Experimental results are usually confined to a small range of excitation levels and may correspond to sublinear or superlinear behavior depending on the region probed.

Amorphous semiconductor, Photoconductivity, Quasi Fermi levels and Recombination.

"A Physical Interpretation for Superlinear and Sublinear Photoconductivity in Amorphous Semiconductors Photoconductivity in Amorphous Silicon", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.6, Issue 4, page no.190-194, April-2019, Available :http://www.jetir.org/papers/JETIR1904U79.pdf

"A Physical Interpretation for Superlinear and Sublinear Photoconductivity in Amorphous Semiconductors Photoconductivity in Amorphous Silicon", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.6, Issue 4, page no. pp190-194, April-2019, Available at : http://www.jetir.org/papers/JETIR1904U79.pdf