• Archana Srivastava

This research paper describes the synthesis and characterization of Si quantum dots prepared by PVCT at the working pressures of 10 Torr and 20 Torr with substrate temperature at 77 K using liquid nitrogen. The synthesized quantum dots were characterized by high resolution travelling electron microscope (HRTEM) and UV-visible spectroscopy. HRTEM images of synthesized quantum dots suggest that the size of quantum dots varies from 8-10 nm. On the basis of UV-visible spectroscopy measurements, a direct band gap has been observed. The temperature dependence of the dc conductivity of thin films of Si quantum dots in the temperature range 300 K to 450 K have also been studied. It is evident that the dc conductivity (dc) increases exponentially with increasing temperature, indicating that conduction in these quantum dots is through an activated process which also shows the semiconducting behavior of these quantum dots.

Si quantum dots, Thin Films, optical properties, electrical properties

"Studies of Si Quantum Dots synthesized at different working pressure ", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.6, Issue 4, page no.415-421, April-2019, Available :http://www.jetir.org/papers/JETIR1904V10.pdf

"Studies of Si Quantum Dots synthesized at different working pressure ", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.6, Issue 4, page no. pp415-421, April-2019, Available at : http://www.jetir.org/papers/JETIR1904V10.pdf