• D.Pradhabhan
• Dr.A.Sakthivelu

Successive Ionic Layer Adsorption and Reaction (SILAR) technique was used for reparation of Al doped CdS thin films. Al doped CdS films were annealed at 200oC for 1 hour in air. Al doped CdS films with various doping concentration were characterized using XRD, Field Emission Scanning Electron Microscopy (FESEM) and UV-Visible spectrophotometer. The XRD study shows that the zinc blend cubic structure of CdS is not much affected with respect to Al doping. The micro structural properties and grain size with various Al doping concentration were investigated from XRD data. The percentage of transmittance and optical band gap were investigated from optical data. The optical band gap of Al doped CdS films decreases for the increase in Al doping concentration.

"OPTICAL, STRUCTURAL AND ELECTRICAL PROPERTIES OF SILAR DEPOSITED Al DOPED CdS THIN FILMS ", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.6, Issue 6, page no.793-798, June-2019, Available :http://www.jetir.org/papers/JETIR1906406.pdf

"OPTICAL, STRUCTURAL AND ELECTRICAL PROPERTIES OF SILAR DEPOSITED Al DOPED CdS THIN FILMS ", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.6, Issue 6, page no. pp793-798, June-2019, Available at : http://www.jetir.org/papers/JETIR1906406.pdf