• Vijay Maurya
• Anuj Verma

Czochralski (CZ) process, which accounts for 80% to 90% of worldwide silicon consumption, consists of dipping a small single-crystal seed into molten silicon and slowly withdrawing the seed while rotating it simultaneously. The Czochralski method, invented by the Polish scientist J. Czochralski in 1916, is the method of choice for high volume production of Si single crystals of exceptional quality and shall be discussed briefly. To start growing a "Czochralski crystal" by filling a suitable crucible with the material, here hyper pure correctly doped Si pieces obtained by crushing the poly-Si from the Siemens process. Care has been taken up to keep impurities out by doing it in clean room and use hyper pure silica for your crucible. There are three major stages involved in this research. The first is the production of pure materials and improved equipment associated with the preparation of these materials. The second is the production of single crystals first in the laboratory and then extending it to commercial production. The third is the characterization and utilization of these crystals in devices. We focus on a Czochralski crystal growth process to produce a 0.7 m long radius of 0.5m. The process is comprised of a rotating pedestal that can move in the axial direction. A crucible containing silicon crystals is placed on the pedestal and heaters (placed on the sides of the chamber and under the pedestal) are used to increase the temperature of the Si crystals inside the crucible (through which will smoothly regulate the cooling process of the crystal as it leaves the chamber), after the crystal radius has obtained its final value, and accounts for radiative heat exchange between the crystal, heater shield, crucible, melt surface and the environment.

Single crystal growth, Czochralski method, SGS, EGS, Ingot, crucible

"CRUCIBLE SINGLE CRYSTAL GROWTH OF SILICON BY CZOCHRALSKI METHOD", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.6, Issue 6, page no.160-163, June-2019, Available :http://www.jetir.org/papers/JETIR1906C26.pdf

"CRUCIBLE SINGLE CRYSTAL GROWTH OF SILICON BY CZOCHRALSKI METHOD", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.6, Issue 6, page no. pp160-163, June-2019, Available at : http://www.jetir.org/papers/JETIR1906C26.pdf