• Kirankumar B. Balavalad
• Ayyappa Vajjaramatti
• Ashokkumar M

The work presents modelling and simulation of MEMS based SiC-on-insulator based piezoresistive pressure sensor for high temperature applications. The sensor demonstrated here is a SiC on insulator-based pressure sensor with SiO2 as an insulating layer. The piezoresistors are SiC material, this is considered in the view that they have good resistance to high temperature. The sensor modeled is a variant to the well-known SOI pressure sensors. The sensor is modeled and simulated using COMSOL Multiphysics. The modeled sensor is compared with Si and SiC based sensor. The voltage sensitivity of SiCOI (Silicon Carbide on Insulator) is 1.2mV/V.MPa compared to 2.8 mV/V.MPa and 2.8 mV/V.MPa for Si & SiC respectively. The sensors are alayzed for the temperature sensitivity. SiCOI has the temperature sensitivity of 8μV/V.0C compared to 32 μV/V.0C & 12.4 μV/V.0C for Si and SiC respectively. Hence it can be observed that SiCOI has the least temperature sensitivity making to the most feasible sensor working at high temperatures. SiC may be considered while designing sensors operating at high temperatures.

piezoresistive pressure sensor, mems, COMSOL, silicon and silicon carbide.

"Silicon carbide on insulator-based pressure sensor for high temperature applications", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.6, Issue 6, page no.347-352, June 2019, Available :http://www.jetir.org/papers/JETIR1907F46.pdf

"Silicon carbide on insulator-based pressure sensor for high temperature applications", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.6, Issue 6, page no. pp347-352, June 2019, Available at : http://www.jetir.org/papers/JETIR1907F46.pdf