• S K DUBEY

In this study, gallium arsenide samples were first implanted with 325 keV Mn+ ions for the fluence of 2 x 1016 ions cm-2. These implanted samples were further irradiated using 5 MeV Si2+ ion beams for the fluence of 1 x 1016 ions cm-2 at a substrate temperature of 350 0C for recrystallization. Super conducting quantum interface device (SQUID) measurements on as-implanted sample revealed the paramagnetic behavior. While, after irradiation with 5 MeV Si2+ ions, SQUID measurements showed the hysteresis loop indicative of the ferromagnetic behavior. Ferromagnetic transition temperature after irradiation of (Ga,Mn)As samples measured from zero field cool and field cool measurements were found to be 292 Kelvin .

GaAs; Mn+ implantation; Si2+ irradiation; SQUID

" Ferromagnetism in (Ga, Mn) As synthesized by Mn+ ion implantation and 5 MeV Si++ ion beam induced recrystallization ", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.6, Issue 6, page no.562-565, June 2019, Available :http://www.jetir.org/papers/JETIR1907P87.pdf

" Ferromagnetism in (Ga, Mn) As synthesized by Mn+ ion implantation and 5 MeV Si++ ion beam induced recrystallization ", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.6, Issue 6, page no. pp562-565, June 2019, Available at : http://www.jetir.org/papers/JETIR1907P87.pdf