• S.B. Vishwakarma
• S.K Dubey
• R.L Dubey

Thin SiO2 film of thickness 300 nm grown on p-type silicon substrate was implanted with 100 keV silicon negative ions with fluences varying from 1 × 10 15 to 2 × 10 17 ions cm-2. The glancing angle X-ray diffraction (GXRD), Ultraviolet visible infrared (UV-Vis-NIR) spectroscopy and Raman scattering techniques have been used to investigate SiO2 thin film after implantation. GXRD spectra of non-implanted sample showed the presence of a broad peak of SiO2 between 17.5º and 25º. After implantation, silicon peak at 53.20o corresponding to (311) reflection was observed. The variation in peak intensity with respect to ion fluence revealed the increase in silicon concentration within SiO2 matrix. The increase in strain value showed the lattice expansion after silicon ions implanted in SiO2. UV-Vis-NIR spectra showed the decrease in energy band gap value for silicon with increase in the ion fluences. Raman scattering measurements revealed the presence of first order and second order Transverse optical (TO) mode at 520.4 cm-1 and 963.06 cm-1 respectively. Phonon confinement model was employed to first order Raman TO phonon mode revealed the increase in phonon coherence length from 9.41 to 10.04 nm with increase in the concentration of silicon ions in SiO2 matrix.

SiO2 thin film; GXRD; UV-Vis-NIR; Raman

"Structural and Optical Investigations of SiO2 Layers Implanted with 100 keV Silicon Negative Ions ", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.6, Issue 6, page no.148-154, June-2019, Available :http://www.jetir.org/papers/JETIR1907S91.pdf

"Structural and Optical Investigations of SiO2 Layers Implanted with 100 keV Silicon Negative Ions ", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.6, Issue 6, page no. pp148-154, June-2019, Available at : http://www.jetir.org/papers/JETIR1907S91.pdf