UGC Approved Journal no 63975(19)

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Published in:

Volume 6 Issue 6
June-2019
eISSN: 2349-5162

UGC and ISSN approved 7.95 impact factor UGC Approved Journal no 63975

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Published Paper ID:
JETIR1907U36


Registration ID:
224901

Page Number

1104-1109

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Title

Synthesis and Characterization of Thick Porous Bismuth Oxide Films for Resistive Gas Sensing Applications

Abstract

Abstract : Nanostructured MnO2 powders were synthesized by hydrolysis of AR grade manganese chloride in aqueous-alcohol solution with bismuth chloride (dopant in the proportion 1, 3, 5 and 7 wt %) to get fine powder. Thick films of Bi2O3-doped MnO2 powders were prepared by screen printing technique. The structural properties of these films were studied by X-ray diffraction technique. The XRD spectrum revels that the films are polycrystalline in nature and monoclinic in structure. The average grain size was determined using Scherrer’s formula and was estimated to be of 396 nm. It was also observed that, the amorphous nature decreases (i. e. crystalline nature increases) with the percentage of doping with bismuth oxide. The SEM analysis, it is clear that with the increase of doping concentration, there is a change in the surface texture of the films. Larger the doping concentration, larger would be the amount of Bi2O3 dispersed on the surface, and smaller would be the chances of reaching the gas to base material. The I-V characteristics of the pure and Bi2O3 doped MnO2 films at room temperature and at high temperature shows that the contacts fabricated on the films were ohmic in nature and the p-n junctions were randomly distributed on the surface of the film. The conductivity values of all samples were larger at room temperature than at higher temperature. It may be due to air humidity associated with the films at room temperature. The increase in conductivity with increasing temperature (above 500C) could be attributed to negative temperature coefficient and semiconducting nature of the Bi2O3 activated MnO2 samples. The Bi2O3 activated films showed very high electrical resistance of the order of 105  in air.

Key Words

Bi2O3-doped MnO2, XRD, SEM, conductivity

Cite This Article

"Synthesis and Characterization of Thick Porous Bismuth Oxide Films for Resistive Gas Sensing Applications", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.6, Issue 6, page no.1104-1109, June 2019, Available :http://www.jetir.org/papers/JETIR1907U36.pdf

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2349-5162 | Impact Factor 7.95 Calculate by Google Scholar

An International Scholarly Open Access Journal, Peer-Reviewed, Refereed Journal Impact Factor 7.95 Calculate by Google Scholar and Semantic Scholar | AI-Powered Research Tool, Multidisciplinary, Monthly, Multilanguage Journal Indexing in All Major Database & Metadata, Citation Generator

Cite This Article

"Synthesis and Characterization of Thick Porous Bismuth Oxide Films for Resistive Gas Sensing Applications", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.6, Issue 6, page no. pp1104-1109, June 2019, Available at : http://www.jetir.org/papers/JETIR1907U36.pdf

Publication Details

Published Paper ID: JETIR1907U36
Registration ID: 224901
Published In: Volume 6 | Issue 6 | Year June-2019
DOI (Digital Object Identifier):
Page No: 1104-1109
Country: Jalgaon, Maharastra, India .
Area: Physics
ISSN Number: 2349-5162
Publisher: IJ Publication


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