• S. A. Gaikwad
• M. A. Gaikwad

GaN/AlGaN materials are very important to fabricate low wavelength lasers. It is desirable to develop the simulator to study these devices. Numerical simulations have been carried out to solve the Poisson’s Equation in two dimensions in the given structure to obtain the potential distribution in the device. The structural parameters used in simulation are length (700mm), width (50mm) and thickness (3.520mm). A simulator has been developed which receives the structural and material parameters and estimates the electrostatic potential at each node point in various layers in the device. For this purpose, the device structure has been transformed in to a mesh having 65x50 node points. The boundary conditions are applied and potential at fixed and free boundary is estimated. The potential at fixed boundaries are calculated by considering the donor and acceptor concentrations and band degeneracy parameters. By applying the forward difference formula the potential at each node point has been estimated. The Poisson equation is solved to get potential at each node point in device. The simulator generates the 3D surface profiles of the potential distribution in the hetero-structure laser diode. The numerical values of potential at various points are required in design and analysis of semiconductor laser diodes. We have carried out efficient computational analysis using MATLAB tools so as to reduce number of iterations. This paper will high light the details of methodology and results with their analysis.

Laser diode, Hetero-structure, Band degeneracy, Simulator, MATLAB.

"SIMULATOR FOR SOLVING POISSON’S EQUATION IN GAN/ALGAN DOUBLE HETERO-STRUCTURE LASER DIODE", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.6, Issue 6, page no.31-33, June 2019, Available :http://www.jetir.org/papers/JETIR1908309.pdf

"SIMULATOR FOR SOLVING POISSON’S EQUATION IN GAN/ALGAN DOUBLE HETERO-STRUCTURE LASER DIODE", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.6, Issue 6, page no. pp31-33, June 2019, Available at : http://www.jetir.org/papers/JETIR1908309.pdf