UGC Approved Journal no 63975(19)

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Volume 7 Issue 3
March-2020
eISSN: 2349-5162

UGC and ISSN approved 7.95 impact factor UGC Approved Journal no 63975

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Published Paper ID:
JETIR2003418


Registration ID:
501232

Page Number

763-770

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Title

SODIUM DIFFUSION IN COPPER INDIUM GALLIUM- DISELENIDE SOLAR CELLS

Authors

Abstract

Photovoltaics provide an elegant and non-polluting approach to meet future energy requirements both in developed and developing countries. Photovoltaic cells convert light energy into electricity at the atomic level. At present the solar research is primarily focused on low cost thin-film solar technology. Copper-Indium- Gallium- Diselendide (CIGS) has become one of the most important materials in developing polycrystalline thin-film solar cell structures. Solar cells made from a Copper-Indium-GalliumDiselendide (CIGS) absorber layer are more than 100X better at absorbing light than an equivalent absorber layer made from silicon; consequently, CIGS solar cells can be constructed as thin film devices, with less material usage and potentially less cost than conventional silicon-based solar cells. Thin film solar cells are based on semi- conductor materials, preferably coated on large inexpensive substrates like glass, metals or polymer foils. Thin-film modules have reached technical readiness achieving measurable and growing market share not only as a result of a recent silicon shortcut for wafer based solar cell production but also due to their superior behaviour under weak light and their small temperature coefficient potentially providing a higher current yield. Cu(In, Ga) Se2 (CIGS) absorber layers for thin film solar cells were grown without sodium. Na was diffused into some of the absorbers after growth, which led to strongly improved device performance compared with Na-free cells. Efficiencies of 13.3% and 14.4% were achieved at substrate temperatures as low as 400oC and 450oC, respectively. With the post-deposition treatment, the effects of Na on CIGS growth are excluded and most of the Na is expected to reside at grain boundaries. The dominating cause for Nainduced device improvements might be passivation of grain boundaries. The photovoltaic properties of CIGS cells on an alumina substrate were improved through the use of Nadoped Mo as the bottom layer of a Mo back contact. Na was supplied to the CIGS bulk region from an alumina/ Na-doped Mo/Mo structure, similar to the Na diffusion from soda-lime glass. The diffusion of Na from the Na-doped Mo was controlled effectively compared to that from Soda-lime glass (SLG). The present results indicate that Na-doped Mo acts as a Na source material and that the Na amount can be controlled by adjustment of thickness of Na-doped Mo layer, without the use of an alkali barrier layer. The highest conversion efficiency of 13.34% (Jsc= 34.62 mA/cm2, Voc=0.58 V and FF= 66%) for an active area of 0.45 cm2 on an alumina substrate was obtained for 100 nm Na-doped Mo/1000 nm Mo.

Key Words

SODIUM DIFFUSION IN COPPER INDIUM GALLIUM- DISELENIDE SOLAR CELLS

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"SODIUM DIFFUSION IN COPPER INDIUM GALLIUM- DISELENIDE SOLAR CELLS", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.7, Issue 3, page no.763-770, March-2020, Available :http://www.jetir.org/papers/JETIR2003418.pdf

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2349-5162 | Impact Factor 7.95 Calculate by Google Scholar

An International Scholarly Open Access Journal, Peer-Reviewed, Refereed Journal Impact Factor 7.95 Calculate by Google Scholar and Semantic Scholar | AI-Powered Research Tool, Multidisciplinary, Monthly, Multilanguage Journal Indexing in All Major Database & Metadata, Citation Generator

Cite This Article

"SODIUM DIFFUSION IN COPPER INDIUM GALLIUM- DISELENIDE SOLAR CELLS", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.7, Issue 3, page no. pp763-770, March-2020, Available at : http://www.jetir.org/papers/JETIR2003418.pdf

Publication Details

Published Paper ID: JETIR2003418
Registration ID: 501232
Published In: Volume 7 | Issue 3 | Year March-2020
DOI (Digital Object Identifier):
Page No: 763-770
Country: -, -, India .
Area: Engineering
ISSN Number: 2349-5162
Publisher: IJ Publication


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