• Dr.Akhilesh Upadhyay
• Dr Nidhi Tiwari
• Dr Mukesh Yadav
• Prof Pallavi Pahadiya
• Prof Ruby Jain

Transistor is an active device of electronics and it is a very big revolutionary research in electronics industry. As time flies away, needs of customers increases in many aspects of area and portability of device. Circuits for Nanoelectronic devices become more complicated and most challenging. The first transistor invented in 1948 in Bell laboratory. Initially Bipolar Junction Transistors able to perform various operation of electronic. But time to time requirements changes and technology changes. After BJT, Field effect transistors (FET) introduced. These were most advanced transistors. These transistors operate by the effect of electric field generated. But in nanoelectronic devices FET transistors cannot perform well. Now days some new transistors are introduced like MESFET, FinFet. To make more short devices, parameters of transistors have to scale down. But after a certain limit FET behaves enormously. New transistor is come in picture for solution of MOSFET limitation is Multi-gate Field Effect Transistor and FinFet is a type of Multi-gate Field Effect Transistor (MGFET). This paper includes limitations of BJT and FET and advantage and challenges of FinFet.

BJT, MOSFET, FinFet, multi gate transistor, short channel effect

"The revolutionary change in transistor technology: FinFet", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.7, Issue 4, page no.376-381, April 2020, Available :http://www.jetir.org/papers/JETIR2004544.pdf

"The revolutionary change in transistor technology: FinFet", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.7, Issue 4, page no. pp376-381, April 2020, Available at : http://www.jetir.org/papers/JETIR2004544.pdf