UGC Approved Journal no 63975(19)

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Published in:

Volume 8 Issue 1
January-2021
eISSN: 2349-5162

UGC and ISSN approved 7.95 impact factor UGC Approved Journal no 63975

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Published Paper ID:
JETIR2101338


Registration ID:
510329

Page Number

964-967

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Title

Ultrasonic Wave in Semiconductor Quantum Well structures

Abstract

The effect of intra sub-band scattering by LA phonons on the dc field transport properties of electrons in quasi – 2D semiconductors is investigated using Phonon Boltzmann Transport Equation (PBTE), within the frame work of a simple theoretical model n which acoustic attention (amplification) effects are studied. The model assumes the electrons distribution is a displaced Fermi function with scattering confined to LA phonons which are in intimate contact with 2D-electron gas. The numerically calculated dependence of attenuation coefficient on phonon wave vector and quantum well width are shown and discussed.

Key Words

Ultrasonic Wave in Semiconductor Quantum Well structures

Cite This Article

"Ultrasonic Wave in Semiconductor Quantum Well structures", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.8, Issue 1, page no.964-967, January-2021, Available :http://www.jetir.org/papers/JETIR2101338.pdf

ISSN


2349-5162 | Impact Factor 7.95 Calculate by Google Scholar

An International Scholarly Open Access Journal, Peer-Reviewed, Refereed Journal Impact Factor 7.95 Calculate by Google Scholar and Semantic Scholar | AI-Powered Research Tool, Multidisciplinary, Monthly, Multilanguage Journal Indexing in All Major Database & Metadata, Citation Generator

Cite This Article

"Ultrasonic Wave in Semiconductor Quantum Well structures", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.8, Issue 1, page no. pp964-967, January-2021, Available at : http://www.jetir.org/papers/JETIR2101338.pdf

Publication Details

Published Paper ID: JETIR2101338
Registration ID: 510329
Published In: Volume 8 | Issue 1 | Year January-2021
DOI (Digital Object Identifier):
Page No: 964-967
Country: -, -, India .
Area: Engineering
ISSN Number: 2349-5162
Publisher: IJ Publication


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