• Dr. Sujatha R

MOSFET is the basic component of VLSI and ULSI circuits and finds applications in many electronic systems used in satellite design. These devices are susceptible to degradation due to radiation in outer space. Conventional MOSFET can survive 3-10 krad (Si) of total dose without much parametric degradation. However, ionising radiation dose in excess of 35 krad (Si) may turn out to be detrimental to the functioning of the device. The space environment is hostile to most integrated components such as those for navigation, communication, data processing function in satellite and various space missions. The radiation generally encountered in space are α, β, γ, x-ray, energetic electrons, protons, neutrons and ions of various kinds. Gamma ray photons deposit energy in the components mainly by ionisation. In this paper, we report gamma ray induced changes in the electrical characteristics of MOSFET 2N6796 (JANTXV) used in satellites. Pre-irradiation measurements of electrical parameters are made using TESEC measurement system. Selected devices are exposed to different gamma dose using a BRIT gamma irradiator. Post-irradiation measurements of electrical characteristics display significant degradation in threshold voltages and the leakage current increases as the gamma dose increases.

MOS, radiation effect, threshold voltage, leakage current

"Gamma radiation effect on space application MOSFET ", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.9, Issue 10, page no.b333-b336, October-2022, Available :http://www.jetir.org/papers/JETIR2210152.pdf

"Gamma radiation effect on space application MOSFET ", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.9, Issue 10, page no. ppb333-b336, October-2022, Available at : http://www.jetir.org/papers/JETIR2210152.pdf