• Santosh Arcot

One of the important feature of power switching system is the use of fast switching power semiconductor devices. MOSFET is used in fast switching applications including wireless power transfer switching systems. A thermal model based on thermal time constants is necessary to accurately predict MOSFET device power dissipation and characteristics. Many thermal models discussed in the literature are based on linear approximation and not designed to incorporate dynamic MOSFET characteristics and heatsink model. In this paper, we present literature survey of existing thermal models. A model was developed for MOSFET RDS(ON) was analyzed along with average power calculation, heatsink temperature and junction to case temperature. Transient thermal model for RDS(ON) was incorporated into full bridge resonant model using LT spice simulation tool. MOSFET power dissipation & junction temperature within the Semiconductor device is calculated. The proposed model has a dynamic feature, adjusting the device resistance according to simulation time. As a result, the model is well-suited for predicting MOSFET junction temperature based on the resonant current flowing through the device. Through simulation results, we provide estimations for junction temperature rise and average power dissipation, validating the effectiveness of proposed approach.

MOSFET, reliability, LT spice, power, temperature, high voltage

"Power MOSFET Reliability: LTspice-Based Junction Temperature Analysis", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.10, Issue 8, page no.b286-b291, August-2023, Available :http://www.jetir.org/papers/JETIR2308136.pdf

"Power MOSFET Reliability: LTspice-Based Junction Temperature Analysis", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.10, Issue 8, page no. ppb286-b291, August-2023, Available at : http://www.jetir.org/papers/JETIR2308136.pdf