UGC Approved Journal no 63975(19)
New UGC Peer-Reviewed Rules

ISSN: 2349-5162 | ESTD Year : 2014
Volume 12 | Issue 10 | October 2025

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Published in:

Volume 11 Issue 4
April-2024
eISSN: 2349-5162

UGC and ISSN approved 7.95 impact factor UGC Approved Journal no 63975

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Published Paper ID:
JETIR2404D43


Registration ID:
538712

Page Number

n354-n363

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Title

Exploring Energy Band Structures in Semiconductors: A Comprehensive Analysis

Abstract

In this comprehensive project, we delve deep into the fascinating world of energy bands in semiconductors and explore the intricacies of various semiconductor types, employing a user-friendly approach that integrates diagrams and MATLAB simulation to facilitate understanding. Energy bands, akin to roadmaps for electrons within semiconductors, serve as fundamental guides to their behavior. Through an exhaustive examination facilitated by illustrative diagrams and interactive MATLAB simulation, we aim to demystify the complexities surrounding these energy bands, making them accessible to learners of all levels. Our exploration extends to the exploration of intrinsic and extrinsic semiconductors. Intrinsic semiconductors represent the purest form, characterized by pristine energy band configurations, while extrinsic semiconductors are intentionally modified to enhance their functional properties. Through MATLAB simulations, we offer an immersive learning experience, allowing readers to visualize the intricate interactions of electrons within energy bands and comprehend the effects of different parameters on semiconductor behavior. By providing hands-on learning opportunities, we empower readers to deepen their understanding and engage with the material actively. Furthermore, we discuss practical implications and potential applications of energy bands in semiconductors, highlighting their significance in various technological advancements. From transistors to solar cells, energy bands play a crucial role in shaping the functionality of semiconductor devices, driving innovation and progress in diverse fields. Ultimately, our project aims to equip readers with a comprehensive understanding of energy bands in semiconductors and semiconductor types, empowering them to grasp the foundational principles underlying semiconductor physics and appreciate their importance in modern technology. Through accessible language, illustrative diagrams, and interactive simulations, we aim to make complex concepts more approachable and foster a deeper appreciation for the fascinating world of semiconductors.

Key Words

Energy bands, Semiconductors, Intrinsic semiconductors, Extrinsic semiconductors, Band gap, Valence band, Conduction band, Dopants, Donor impurities, Acceptor impurities, MATLAB simulations, Electrical conductivity, Optical properties, Charge carriers, Semiconductor devices, Transistors, Diodes, Photovoltaic cells, Optoelectronic applications.

Cite This Article

"Exploring Energy Band Structures in Semiconductors: A Comprehensive Analysis", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.11, Issue 4, page no.n354-n363, April-2024, Available :http://www.jetir.org/papers/JETIR2404D43.pdf

ISSN


2349-5162 | Impact Factor 7.95 Calculate by Google Scholar

An International Scholarly Open Access Journal, Peer-Reviewed, Refereed Journal Impact Factor 7.95 Calculate by Google Scholar and Semantic Scholar | AI-Powered Research Tool, Multidisciplinary, Monthly, Multilanguage Journal Indexing in All Major Database & Metadata, Citation Generator

Cite This Article

"Exploring Energy Band Structures in Semiconductors: A Comprehensive Analysis", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.11, Issue 4, page no. ppn354-n363, April-2024, Available at : http://www.jetir.org/papers/JETIR2404D43.pdf

Publication Details

Published Paper ID: JETIR2404D43
Registration ID: 538712
Published In: Volume 11 | Issue 4 | Year April-2024
DOI (Digital Object Identifier):
Page No: n354-n363
Country: -, -, India .
Area: Engineering
ISSN Number: 2349-5162
Publisher: IJ Publication


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