UGC Approved Journal no 63975(19)

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Volume 11 | Issue 10 | October 2024

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Volume 11 Issue 10
October-2024
eISSN: 2349-5162

UGC and ISSN approved 7.95 impact factor UGC Approved Journal no 63975

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Published Paper ID:
JETIR2410318


Registration ID:
549203

Page Number

c147-c151

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Title

High-Precision and Low-Power Offset Cancelling Tri-State Sensing Latch in NAND Flash Memory Using SAPON and LECTOR Methods

Abstract

The Offset Cancelling Tri-State Sensing Latch (OCTSL) offers significant improvements in read precision and power efficiency over traditional Offset Cancelling Sensing Latches (OCSL)[1]. This work enhances the OCTSL design by integrating the SAPON[2], [3] and LACTOR[4], [5] techniques, further optimizing its performance. The simulation results for the baseline OCTSL show an average power consumption of 1.347 mW and a delay of 71.37 ns. With the SAPON technique, power consumption decreases by 37.96%, reducing to 0.8361 mW, while the delay marginally increases by 1.89%, reaching 72.73 ns. The LACTOR approach results in an average power consumption of 0.8576 mW, reflecting a 36.37% reduction in power compared to the baseline OCTSL, with the delay increasing by 12.12%, reaching 80.02 ns. Overall, both SAPON and LACTOR significantly enhance power efficiency, with SAPON showing the best energy savings while maintaining a lower delay increase. LACTOR, on the other hand, improves sensing reliability but with a slightly higher delay. Together, these optimizations contribute to improving both power efficiency and reliability for high-density NAND flash memory systems.

Key Words

NAND flash memory, sensing latch, offset cancelling, low-power, high-precision, SAPON, LECTOR.

Cite This Article

"High-Precision and Low-Power Offset Cancelling Tri-State Sensing Latch in NAND Flash Memory Using SAPON and LECTOR Methods", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.11, Issue 10, page no.c147-c151, October-2024, Available :http://www.jetir.org/papers/JETIR2410318.pdf

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2349-5162 | Impact Factor 7.95 Calculate by Google Scholar

An International Scholarly Open Access Journal, Peer-Reviewed, Refereed Journal Impact Factor 7.95 Calculate by Google Scholar and Semantic Scholar | AI-Powered Research Tool, Multidisciplinary, Monthly, Multilanguage Journal Indexing in All Major Database & Metadata, Citation Generator

Cite This Article

"High-Precision and Low-Power Offset Cancelling Tri-State Sensing Latch in NAND Flash Memory Using SAPON and LECTOR Methods", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.11, Issue 10, page no. ppc147-c151, October-2024, Available at : http://www.jetir.org/papers/JETIR2410318.pdf

Publication Details

Published Paper ID: JETIR2410318
Registration ID: 549203
Published In: Volume 11 | Issue 10 | Year October-2024
DOI (Digital Object Identifier):
Page No: c147-c151
Country: Vizianagaram, Andhra Pradesh, India .
Area: Engineering
ISSN Number: 2349-5162
Publisher: IJ Publication


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