UGC Approved Journal no 63975(19)
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ISSN: 2349-5162 | ESTD Year : 2014
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Volume 12 Issue 1
January-2025
eISSN: 2349-5162

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Published Paper ID:
JETIR2501752


Registration ID:
563335

Page Number

h557-h565

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Title

Studies on phase change Se80In5Te6Sb9 thin films by -irradiation for optoelectronic devices

Abstract

In this research work, we have synthesized bulk Se80In5Te6Sb9 alloy using melt quenching technique and these films having thickness 400 nm were coated on glass substrate using thermal evaporation technique. The amorphous as well as glassy nature of synthesized Se80In5Te6Sb9 alloy was confirmed by non-isothermal DSC measurements at different heating rates 5, 10, 15, 20 K/min. The phase transformation studies in Se80In5Te6Sb9 thin films were studied by inducing γ-irradiation of doses 4, 8, and 12 kGy at dose rate of 2 kGy/hr using Gamma chamber (GC-5000). The structural, morphological and optical studies of as-prepared and γ-irradiated thin films were studied by High resolution X-ray diffraction (HRXRD), Field Emission Scanning Electron Microscopy (FESEM) and UV/VIS/NIR spectrophotometer respectively. The optical parameters such as absorption coefficient and extinction coefficient were found to be vary with γ-irradiation doses. The optical band gap is found to be increased as γ-irradiation doses increases. These notable shifts in the optical band gap and absorption coefficient values can be explained by the increase in disorderness and lattice strain due to γ-irradiation.

Key Words

Chalcogenideglass, Thin films, Absorption coefficient, Band gap, Phase Transformation

Cite This Article

"Studies on phase change Se80In5Te6Sb9 thin films by -irradiation for optoelectronic devices ", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.12, Issue 1, page no.h557-h565, January-2025, Available :http://www.jetir.org/papers/JETIR2501752.pdf

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2349-5162 | Impact Factor 7.95 Calculate by Google Scholar

An International Scholarly Open Access Journal, Peer-Reviewed, Refereed Journal Impact Factor 7.95 Calculate by Google Scholar and Semantic Scholar | AI-Powered Research Tool, Multidisciplinary, Monthly, Multilanguage Journal Indexing in All Major Database & Metadata, Citation Generator

Cite This Article

"Studies on phase change Se80In5Te6Sb9 thin films by -irradiation for optoelectronic devices ", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.12, Issue 1, page no. pph557-h565, January-2025, Available at : http://www.jetir.org/papers/JETIR2501752.pdf

Publication Details

Published Paper ID: JETIR2501752
Registration ID: 563335
Published In: Volume 12 | Issue 1 | Year January-2025
DOI (Digital Object Identifier): https://doi.org/10.56975/jetir.v12i1.563335
Page No: h557-h565
Country: Gorakhpur, Uttar Pradesh, India .
Area: Engineering
ISSN Number: 2349-5162
Publisher: IJ Publication


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