• Jahnavi B M
• Dr. Vasundhara Patel K S

Static Random Access Memory (SRAM) is a key element in modern processors and memory subsystems, but its reliability is severely impacted in radiation-prone environments such as aerospace and satellite systems. Conventional 6T SRAM cells, though widely used, suffer from limited static noise margin (SNM), high leakage, and vulnerability to single-event upsets (SEUs) at scaled technology nodes. To overcome these drawbacks, this work proposes a High-Speed Radiation-Hardened 12T (HSRH12T) SRAM cell designed using FinFET and CNTFET technologies at the 10 nm node. The design aims to achieve improved noise margins, reduced power-delay product, and higher resilience against soft errors. Circuit-level simulations were carried out in Synopsys HSPICE to evaluate read/write delay, dynamic and leakage power, static noise margin, write trip voltage/current, and critical charge (Qcrit). Results indicate that FinFET-based SRAMs provide fabrication readiness and reduced leakage, while CNTFET-based SRAMs achieve superior energy efficiency and stronger radiation tolerance. The comparative analysis demonstrates that CNTFET-based HSRH12T cells are highly promising for next-generation, space-grade memory systems.

IndexTerms - SRAM, FinFET, CNTFET, Radiation Hardened Design, Noise Margin

"Design and Analysis of Radiation-Hardened 12T SRAM Cell Using FinFET and CNTFET Technologies for Space Applications", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.12, Issue 9, page no.d219-d227, September-2025, Available :http://www.jetir.org/papers/JETIR2509333.pdf

"Design and Analysis of Radiation-Hardened 12T SRAM Cell Using FinFET and CNTFET Technologies for Space Applications", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.12, Issue 9, page no. ppd219-d227, September-2025, Available at : http://www.jetir.org/papers/JETIR2509333.pdf