• Vinod Kumar Lodhi
• Prof. (Dr.) Arvind Kumar

The advancement of Gallium Nitride (GaN)-based nanostructures has revolutionized the field of optoelectronics by providing unprecedented improvements in efficiency, thermal stability, and scalability for light-emitting diodes (LEDs). This paper presents an analytical and comparative investigation into the innovative fabrication techniques and performance optimization strategies of GaN-based nano-LEDs for sustainable applications. Emphasis is placed on the roles of Metal-Organic Chemical Vapor Deposition (MOCVD), Molecular Beam Epitaxy (MBE), and Hydride Vapor Phase Epitaxy (HVPE) in enhancing crystal quality, reducing defects, and improving electron mobility. The study also explores doping control, buffer layer engineering, and the influence of nanostructuring on luminous efficiency. Furthermore, it examines the integration of GaN-based LEDs in emerging sectors such as IoT-enabled smart lighting, automotive systems, and energy-efficient illumination, while projecting future prospects in GaN-on-Si, Micro-LEDs, and UV-C sterilization technologies. The outcomes underscore the transformative potential of GaN nanostructures in shaping sustainable, high-performance optoelectronic devices.

Gallium Nitride (GaN), Nanostructures, MOCVD, MBE, Nano-LEDs, Optoelectronics, Micro-LEDs, GaN-on-Si, UV-C LEDs, Sustainable Lighting.

"“ Innovative Fabrication Techniques and Performance Optimization of GaN-Based Nano-LEDs for Sustainable Optoelectronic Applications”", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.12, Issue 10, page no.c653-c662, October-2025, Available :http://www.jetir.org/papers/JETIR2510282.pdf

"“ Innovative Fabrication Techniques and Performance Optimization of GaN-Based Nano-LEDs for Sustainable Optoelectronic Applications”", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.12, Issue 10, page no. ppc653-c662, October-2025, Available at : http://www.jetir.org/papers/JETIR2510282.pdf