• P.T.Dhandar
• V.S. Darekar
• D.R.Hase
• M.S.Olekar
• N.A.Kadlak

Aluminium nitride (AlN) possesses excellent properties for use as a substrate or packaging material in the flourishing microelectronics industry. AlN is difficult to sinter through conventional sintering processes , and pure AlN does not obtain full density even at sintering temperatures above 1800 °C. In this study, pure AlN with Y2O3 additives were investigated as sintering aids. AlN powders are sintered using the spark plasma sintering (SPS) method at 1750°C . The densification is aggrandize due to the application of electrical discharges combined with electrical resistance heating and uniaxial pressure (45 MPa). The microstructure, density and dielectric constant of SPS AlN samples are examined. X-Ray diffraction was used for characterization and phase determination of samples. Scanning electron microscopy analysis was carried out to investigate the grain morphology, grain size, and pores distribution. Bulk density was calculated. Mainly observation on dielectric behaviour of AlN ceramic with Y2O3.It was observed that addition of Y2O3 enhances the densification and promotes grain growth. The dielectric loss tangent tanδ) were explored due to the effects of sintering additives ,where tan δ decrease with Y2O3 best value of 0.0036 .We suggest that the effect of aluminates second phase and the micro imperfections could play an important role on the dielectric properties of sintered AlN ceramics.

Aluminium Nitride, Y2O3, Sintering , SPS, Dielectric Property, Microstructure

"A STUDY ON SINTERING CHARACTERISTIC AND DIELECTRIC PROPERTIES OF ALUMINIUM NITRIDE CERAMICS", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.6, Issue 3, page no.403-407, March-2019, Available :http://www.jetir.org/papers/JETIRAH06070.pdf

"A STUDY ON SINTERING CHARACTERISTIC AND DIELECTRIC PROPERTIES OF ALUMINIUM NITRIDE CERAMICS", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.6, Issue 3, page no. pp403-407, March-2019, Available at : http://www.jetir.org/papers/JETIRAH06070.pdf