• J. V. DHANVIJ

The samples were prepared on glass substrates by sequential thermal evaporation process at a base pressure of 10-5 torr. Schottky barrier junctions of Al-doped n-type Zinc selenide (ZnSe) thin films have been fabricated with Cu on glass substrates. The current-voltage characteristics of Cu- (n) ZnSe/Al junctions show non-linear behavior with rectifying characteristics. From the current-voltage characteristics, the parameters such as ideality factor, saturation current density and barrier height were measured. The rectifying nature of I-V Characteristics with soft reverse current of the fabricated structures indicated the existence of barrier between the films of Cu and (n) ZnSe .Both types of junctions were found to possess a high ideality factor. The barrier height of the junction was found in the range of 0.804 to 0.809 eV. It is seen that heat treatment of the device slight lowers the diode ideality factor and increases the barrier heights.

Thermal evaporation, Barrier height, Diode ideality factor, Schottky barrier.

"Study of Cu- ZnSe Thin Film Schottky Barrier Junctions", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.6, Issue 3, page no.523-525, March-2019, Available :http://www.jetir.org/papers/JETIRAO06080.pdf

"Study of Cu- ZnSe Thin Film Schottky Barrier Junctions", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.6, Issue 3, page no. pp523-525, March-2019, Available at : http://www.jetir.org/papers/JETIRAO06080.pdf