• A. S. Katkar
• Y. B. Khollam
• P. N. Shelke

The Ge/GeOX core-shell nanochain kind of structure was grown on P-type silicon (001) wafer by using simple vapor transport method. The ultra small diameter Ge quantum dots (QDs) were found to be connected with insulator germanium oxide (GeOX). The nanochain kind of structure was stimulated to investigate possibilities to synthesize uniform nanochain structure, so that it will be used to fabricate Ge nanochain single electron transistor (SET) device, which holds one electron in each Ge QD. With these useful findings at room temperature, Ge/GeOX nanochain SET devices may allow to envisage in modern digital and analog circuits.

Ge; GeOX; Nanochain; Vapor transport method; Quantum dots.

"Synthesis of Ge/GeOX nanochain structure using simple vapor transport method", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.6, Issue 5, page no.30-33, May - 2019, Available :http://www.jetir.org/papers/JETIRCP06005.pdf

"Synthesis of Ge/GeOX nanochain structure using simple vapor transport method", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.6, Issue 5, page no. pp30-33, May - 2019, Available at : http://www.jetir.org/papers/JETIRCP06005.pdf